Semiconductor package structure and related methods

ABSTRACT

Implementations of semiconductor packages may include: a substrate having a first side and a second side and a die having an active area on a second side of the die. A first side of the die may be coupled to the second side of the substrate. The semiconductor package may also include a glass lid having a first side and a second side. The glass lid may be coupled over a second side of the die. The semiconductor package may include a first and a second molding compound and one or more cushions positioned between a first side of the glass lid and a portion of the first molding compound. The second molding compound may be coupled to the substrate and the around the die and the glass lid.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of the earlier U.S.Utility patent application to Hsieh entitled “Semiconductor PackageStructure and Related Methods,” application Ser. No. 16/177,697, filedNov. 1, 2018, now pending, the disclosure of which is herebyincorporated entirely herein by reference.

BACKGROUND 1. Technical Field

Aspects of this document relate generally to semiconductor packages,such as image sensors device. Particular implementations may be used incameras or medical imaging devices.

2. Background

Semiconductor devices may include image sensor die coupled to asubstrate through wire bonds. Image sensors convey information relatedto an image by communicating signals in response to incidentelectromagnetic radiation. Image sensors are used in a variety ofdevices including smart phones, digital cameras, night vision devices,medical imagers, and many others. The cavity of image sensors mayinclude plastic sheets or other transparent materials.

SUMMARY

Implementations of semiconductor packages may include: a substratehaving a first side and a second side and a die having an active area ona second side of the die. A first side of the die may be coupled to thesecond side of the substrate. The semiconductor package may also includea glass lid having a first side and a second side. The glass lid may becoupled over a second side of the die. The semiconductor package mayinclude a first and a second molding compound and one or more cushionspositioned between a first side of the glass lid and a portion of thefirst molding compound. The second molding compound may be coupled tothe substrate and the around the die and the glass lid.

Implementations of semiconductor package may include one, all, or any ofthe following:

Wire bonds may electrically couple the die to the substrate.

The die may be an image sensor die.

The substrate may include a stripline or a printed circuit board.

A ball grid array may be on a first side of the substrate.

The one or more cushions may include epoxy, silicone, acrylic, resin,polyimide, polymer, or any combination thereof.

Implementations of semiconductor packages may include: a substratehaving a first side and a second side and a die having an active area ona second side of the die. A first side of the die may be coupled to thesecond side of the substrate. The package may include a first side and asecond side and the glass lid may be coupled over a second side of thedie. The package may include a first molding compound coupled to thesubstrate and around a portion of the die. The first molding compoundmay include one or more shelves on either side of the die. The packagemay include a dam positioned on each of the one or more shelves and aglass lid coupled to the dam. A second molding compound may be coupledwith an edge of the first molding. The second molding compound may becoupled over a portion of the second side of the glass lid.

Implementations of semiconductor packages may include one, all, or anyof the following:

Wire bonds may electrically couple the die to the substrate.

The die may be an image sensor.

The substrate may be a stripline or a printed circuit board.

A ball grid array may be coupled to a first side of the substrate.

The dam may be selected from a group consisting of epoxy, silicone,acrylic, resin, polyimide, polymer, or any combination thereof.

Implementations of a method of forming semiconductor packages mayinclude: coupling a first side of a die to a second side of a substrateand applying a first molding compound to the second side of thesubstrate and a portion of the first side of the die. The moldingcompound may include a shelf above a second side of the die. The methodmay include applying a cushion to the shelf and coupling a first side ofthe glass lid to the shelf. The method may include forming a secondmolding compound on an interface of the first molding compound. Thesecond molding compound may be coupled around two or more sides of theglass lid and a portion of a second side of the glass lid.

Implementations of a method of forming semiconductor packages mayinclude one, all, or any of the following:

The method may further include curing the cushion to form a dam andcuring may include environmental, thermal, or ultraviolet curing.

The cushion may include epoxy, silicone, acrylic, resin, polyimide, orany combination thereof.

The die may be an image sensor having an active area on the second sideof the die.

The substrate may include a stripline or a printed circuit board.

The method may further include plasma cleaning the interface of thefirst molding compound.

The method may further include electrically coupling the die to thesubstrate through wire bonds.

The method may further include applying a ball grid array to a firstside of the substrate.

The foregoing and other aspects, features, and advantages will beapparent to those artisans of ordinary skill in the art from theDESCRIPTION and DRAWINGS, and from the CLAIMS.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations will hereinafter be described in conjunction with theappended drawings, where like designations denote like elements, and:

FIG. 1 is a cross sectional view of an implementation of a semiconductorpackage;

FIG. 2 is a cross sectional view of an implementation of a substrate;

FIG. 3 is a cross sectional view of an implementation of a die coupledto a substrate;

FIG. 4 is a cross sectional view of an implementation of a first portionof mold compound formed around a die;

FIG. 5 is a cross sectional view of an implementation of cushions on ashelf of a first portion of mold compound;

FIG. 6 is a cross sectional view of an implementation of a glass lidcoupled over a die;

FIG. 7 is a cross sectional view of an implementation of a semiconductorpackage having a second portion of mold compound coupled with a firstportion of mold compound; and

FIG. 8 is top view of an implementation of a cushion in a closed loophaving a substantially rectangular shape in an implementation ofsemiconductor device.

DESCRIPTION

This disclosure, its aspects and implementations, are not limited to thespecific components, assembly procedures or method elements disclosedherein. Many additional components, assembly procedures and/or methodelements known in the art consistent with the intended semiconductorpackage will become apparent for use with particular implementationsfrom this disclosure. Accordingly, for example, although particularimplementations are disclosed, such implementations and implementingcomponents may comprise any shape, size, style, type, model, version,measurement, concentration, material, quantity, method element, step,and/or the like as is known in the art for such semiconductor packages,and implementing components and methods, consistent with the intendedoperation and methods.

Referring to FIG. 1, an implementation of a semiconductor package 2 isillustrated. The package includes a substrate 4 having a first side 6and a second side 8. In various implementations, the substrate may be astripline. In some implementations, the stripline substrate may havemultiple units on it. In other implementations, the substrate may be aprinted circuit board or other similar substrates. The package alsoincludes a first side 10 of a die 12 coupled to the second side 8 of thesubstrate 4 through wire bonds 14. In some implementations, the wirebonds may be gold wire. In various implementations, the die 12 iscoupled to the substrate 4 through die bond adhesive such as, bynon-limiting example, epoxies or polyimides. The die bond adhesive maybe electrically conductive in various implementations, or may not beelectrically conductive.

In implementations including a silicon die, the silicon substrate mayinclude a photodiode array therein. In various implementations, thesemiconductor die 12 includes a silicon layer. In other implementations,the semiconductor die 12 may include a substrate having silicon dioxide,glass, silicon-on-insulator, gallium arsenide, sapphire, ruby, siliconcarbide, polycrystalline or amorphous forms of any of the foregoing, andany other type of substrate type for constructing image sensor orsemiconductor devices.

The second side 16 of the die 12 includes an active area 18. In variousimplementations, the die may be a contact image sensor (CIS) die. In animage sensor die, the active area 18 includes a contact layer. Invarious implementations, the contact layer may be considered part of thesemiconductor die, or it may be considered separate from but coupled tothe semiconductor die. As used herein, the contact layer is consideredpart of the semiconductor die and is not considered separate from thematerial of the semiconductor die. In various implementations, thecontact layer may be an interlayer dielectric (LID) material. Thecontact layer may also include one or more metal layers therein. Themetal layers may include one or more metal landing pads. In variousimplementations, the metal layers and/or metal landing pads may includealuminum, copper, tungsten, any other metal, and any combination oralloy thereof. In various implementations, the contact layer may includeone or more diffusion barrier layers. In particular implementations, theone or more diffusion barrier layers may be adjacent to thebackside/first surface, and/or the front side/second surface. Thediffusion barrier layer may include SiN or any other material used in adiffusion barrier layer. The contact layer may include other elementstherein, such as gates or other semiconductor elements.

A ball grid array 15 is coupled to a first side 6 of the substrate 4.The ball grid array 15 may be formed of solder, gold, copper, nickel,lead, tin, or other suitable electrically conductive materials. Invarious implementations, other types of interconnects may be coupled tothe first side of the substrate such as, by non-limiting example, pingrid array (PGA), land grid array, individual solder balls, gold studs,copper studs, and other interconnects that have good electricalconductive properties.

The package also includes two portions of molding compound 20, 22. Aninterface 21 is illustrated between the first molding compound and thesecond molding compound. The interface is illustrated in an enlargedform for ease of viewing and explanation, in actual devices theinterface may not be readily visible. In some implementations, theinterface may be roughened or patterned to aid in bonding of the firstmolding compound and the second molding compound. The two portions ofmolding compound may help to seal the glass. The first portion 20 ofmolding compound is formed on and over a portion of the substrate 4 andthe die 12. In various implementations, the molding compounds mayinclude, by non-limiting example, epoxies, polymers, resins, or othermold compound types.

From the cross sectional view, the cushion 24 is illustrated as twocushions positioned between a first side 26 of a glass lid 28 and thefirst portion 20 of the molding compound. In a top view as illustratedin FIG. 8, the cushion 25 is illustrated as a closed loop having asubstantially rectangular shape. The cushion may be dispensed on theshelf of the first molding compound to support the lid and adhere to theglass. In some implementations, two cushions could be formed where thetwo cushions are concentric. In other implementations, more than twocushions may be used. In various implementations, the cushion may bepositioned between the glass lid and the first portion of moldingcompound. The cushion may allow the release of thermal stress andimprove reliability of the package. The cushions may also be referred toas dams. The dams may further increase the air and moisture seal of thedie. The cushions/dams may be formed of, by non-limiting example,rubber, resin, epoxy, silicone, acrylic, polyimide, polymer, anycombination thereof, or other resilient and moisture blocking materials.The second portion 22 of molding compound is coupled with an edge of thefirst portion of molding compound and over a portion of a second side 30of the glass lid. Using a combination of molding compounds may decreasechances of delamination when compared with packages employing anadhesive to hold the glass lid over the die. Typical packaging for CISuse liquid adhesive to bond the glass lid on CIS die. Typical packagessuffer from delamination on the interface between resin and glass orbetween resin and die when the thermal stress increases.

Referring to FIGS. 2-7, an implementation of a method of forming asemiconductor package is illustrated. The method includes providing asubstrate 32 as illustrated in FIG. 2. The substrate may include astripline structure. A stripline circuit uses a flat strip of metalcoupled between two parallel group planes. The insulating material ofthe substrate forms a dielectric. In various implementations, thestripline may include multiple units on a single strip. In someimplementations, the multiple units may be singulated before couplingdie to the substrates. In other implementations, the multiple units maybe singulated later in the process. In other implementations, thesubstrate may be a standard printed circuit board, laminated substrate,sintered substrate, or another substrate type.

Referring to FIG. 3, the method includes coupling a first side 34 of asemiconductor die 36 to the second side 38 of the substrate 40. Thefirst side of the die 34 may be coupled through die adhesive such asepoxies or polyimides. In various implementations, the die may be madeof silicon. In other implementations, the semiconductor die may includea substrate having silicon dioxide, glass, silicon-on-insulator, galliumarsenide, sapphire, ruby, silicon carbide, polycrystalline or amorphousforms of any of the foregoing, and any other type of substrate forconstructing image sensor or semiconductor devices. The die 36 includesan active region 42 on the second side 44 of the die. The active regionof the die may be a contact image sensor (CIS). In variousimplementations, the contact layer may be considered part of thesemiconductor die, or it may be considered separate from but coupled tothe semiconductor die. The die is electrically coupled to the substratethrough two or more wire bonds 42. In various implementations, the wirebonds may be gold wire or another suitable metal.

The die may be formed through various methods of processingsemiconductor die after forming a plurality of semiconductor devicesthereon. The die may each be separated by die streets in variousimplementations. The method may include thinning a backside of the dieopposite the first side of the die. This may be done by thinning thewafer using any suitable method such as by non-limiting example,backgrinding, lapping, wet etching, any combination thereof, or anyother technique for removing backside damage and/or the material of thesemiconductor substrate substantially uniformly across the largestplanar surface of the substrate. The method may also include flippingthe wafer. The wafer may be coupled to a backgrinding tape and flippedusing the tape. In other implementations, the wafer may be singulatedinto individual die and then the die may be flipped. The plurality ofdie may be singulated through lasering, sawing, plasma etching, or waterjet ablating. Following singulation, the individual die may be coupledto a picking tape thereby making flipping easier. In otherimplementations, the die may be individually removed from the pickingtape through a pick and place system and sorted into a carrier tape.

The die is then removed from the carrier tape and coupled with thesubstrate using any of the die attach materials disclosed in thisdocument. Wire bonds are then applied to the die and substrate to makethe needed electrical connections between the die and the substrate.However, in various implementations, electrical connectors other thanwire bonds could be employed such as, by non-limiting example, bumps,pillars, through silicon vias, pads, clips, or other electricalconnector types.

Referring to FIG. 4, the method then includes forming a first portion 48of molding compound over the substrate 50 and the die 52. The first 48molding compound may be formed to couple over a portion of the substrate50 and around a portion of the die 52. The first 48 molding compounddoes not contact the active area of the die. In various implementations,the first 48 molding compound may be formed to protect and encapsulatethe wire bonds 54 coupling the die 52 to the substrate 50. The firstportion of molding compound may form a shelf 56. The shelf 56 may form aplatform for the glass lid to attach to as illustrated in FIG. 6. Theshelf may have a width A, which may be wider than width B of the secondmolding compound as illustrated in FIG. 7. The differences in width ofmolding compound may facilitate formation of the second moldingcompound. The differences in width may also prevent cracking of a glasslid during pressure loading during the molding process. In variousimplementations, the first molding compound may be formed throughtransfer molding. In other implementations, the molding compound may beformed through other suitable molding processes.

Referring to FIG. 5, the method also includes applying a flexiblecushion/dam 58 to the shelf formed in the first molding compound 62. Theflexible cushion/dam 58 may be made of, by non-limiting example, rubber,epoxy, silicone, acrylic, resin, polyimide, polymer, any materialsdescribed herein, or any combination thereof. The flexible cushion/dam58 may act as a buffer to thermal stress and prevent the delamination ofthe package. In various implementations, the modulus of the flexible dammay be very low in order to allow the coefficient of thermal expansion(CTE) to be variable.

Referring to FIG. 6, the method further includes coupling a first side64 of a glass lid 66 to the shelf 68 of the first molding compound. Theglass lid 66 is coupled to the shelf 68 through/over the flexiblecushion/dam 72. The flexible property of cushion/dam 72 may also allowfor changes in the gap height between the glass lid and the sensor inthe active area of the die. The flexibility of the cushion/dam 72 mayalso help to keep the glass lid 66 in a planar position. In someimplementations, the material of the flexible cushion 72 may be curedfollowing placement of the lid over the cushion 72. The flexible cushionmay be cured by ambient environmental (activated by moisture) cure,thermal cure, or by ultraviolet light cure. In various implementations,the flexible cushion may have high stand off capability and may become adam after having been cured.

Referring to FIG. 7, the method may include forming a second moldingcompound 74 on an interface of the first molding compound 76 and aportion of the second side 78 of the glass lid 80. As previouslydescribed, the interface between the first molding compound and thesecond molding compound is exaggerated in FIG. 7 to facilitateunderstanding of this feature. The second molding compound is alsocoupled around two or more edges 82 of the glass lid. The second moldingcompound may create a seal around the glass lid. In variousimplementations, the method may further include plasma cleaning theinterface of the first molding compound before coupling of the secondmolding compound. Plasma cleaning may help form a stronger adhesive bondbetween the first molding compound and the second molding compound.

As previously described, the width of the shelf A may be larger than thewidth B of the second molding compound 74 covering a second side 78 ofthe glass lid 80. The differences in width may also decrease problems inthe manufacturing process. As previously mentioned, differences in widthmay prevent cracking of the glass lid during pressure loading of themolding process. The second molding compound has a flat surface on theside of the second molding compound opposing the first molding compound.In various implementations, the flat surface may be suitable to couple alens holder to the second molding compound. The structure of thesemiconductor packages like those disclosed in this document may providea more flexible and compact size for a camera module design.

The method of forming a semiconductor package also includes coupling aball grid array 82 to the first side 86 of the substrate 84. In variousimplementations, other interconnects may be coupled to the first side ofthe substrate such as by non-limiting example land grid array (LGA), pingrid array (PGA), or individual interconnects. The interconnects may becoupled through soldering. In other implementations, the array ofinterconnects may be coupled through sockets. Individual interconnectsmay include bumps, studs, or pins formed of electrically conductivemetals such as, by non-limiting example, gold, copper, silver, lead,tin, nickel or any combination thereof.

In places where the description above refers to particularimplementations of semiconductor packages and implementing components,sub-components, methods and sub-methods, it should be readily apparentthat a number of modifications may be made without departing from thespirit thereof and that these implementations, implementing components,sub-components, methods and sub-methods may be applied to othersemiconductor packages.

What is claimed is:
 1. A semiconductor package comprising: a substrate;a die coupled to the substrate; a glass lid coupled over the die; and afirst molding compound and a second molding compound forming aninterface around the glass lid.
 2. The package of claim 1, furthercomprising wire bonds electrically coupling the die to the substrate. 3.The package of claim 1, wherein the first molding compound is coupled tothe substrate, around the die, and around the glass lid.
 4. The packageof claim 1, wherein the substrate is one of a stripline or a printedcircuit board.
 5. The package of claim 1, further comprising a ball gridarray on a first side of the substrate.
 6. The package of claim 1,further comprising one or more cushions coupled between the glass lidand the first molding compound.
 7. A semiconductor package comprising: adie coupled to a substrate; a glass lid coupled over the die; a firstmolding compound coupled to the substrate and around a portion of thedie, the first molding compound comprising one or more shelves; and asecond molding compound coupled with an edge of the first moldingcompound, the second molding compound coupled over a portion of theglass lid facing away from the die; wherein the glass lid is positionedon the one or more shelves.
 8. The package of claim 7, furthercomprising wire bonds electrically coupling the die to the substrate. 9.The package of claim 7, wherein the die is an image sensor die.
 10. Thepackage of claim 7, wherein the substrate is one of a stripline or aprinted circuit board.
 11. The package of claim 7, further comprising aball grid array on a first side of the substrate.
 12. The package ofclaim 7, further comprising a dam positioned on the one or more shelvesbetween the one or more shelves and the glass lid.
 13. A method offorming a semiconductor package, the method comprising: coupling a dieto a substrate; applying a first molding compound to the substrate andthe die; coupling a glass lid over the die; and applying a secondmolding compound on an interface of the first molding compound, theinterface extending around the glass lid.
 14. The method of claim 13,further comprising forming a shelf in the first molding compound. 15.The method of claim 14, further comprising coupling a cushion onto theshelf.
 16. The method of claim 13, wherein the die is an image sensorcomprising an active area.
 17. The method of claim 13, wherein thesubstrate is one of a stripline or a printed circuit board.
 18. Themethod of claim 13, further comprising plasma cleaning the interface ofthe first molding compound.
 19. The method of claim 13, furthercomprising electrically coupling the die to the substrate through wirebonds.
 20. The method of claim 13, further comprising applying thesecond molding compound over a portion of a second side of the glass lidopposite a first side of the glass lid facing the die.